| PART |
Description |
Maker |
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT14F100B APT14F100S |
N-Channel FREDFET 1000V, 14A, 1.00Ω Max, trr ?40ns
N-Channel FREDFET 1000V, 14A, 1.00ヘ Max, trr ÷240ns
|
Microsemi Corporation
|
| FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
|
|
| FAN1616A FAN1616AD-2.5 FAN1616AD-3.3 FAN1616AD-5 F |
Pch Power MOSFET; Surface Mount Type: N; Package: TO-220NIS; R DS On (Ω): (max 0.19) (max 0.12); I_S (A): (max -14)
Pch Power MOSFET; Surface Mount Type: N; Package: TO-220NIS; R DS On (Ω): (max 0.09) (max 0.045); I_S (A): (max -20)
Pch Power MOSFET; Surface Mount Type: N; Package: TO-220NIS; R DS On (Ω): (max 5); I_S (A): (max -1)
FETs - Nch 700VFETs - Nch 700VFETs - Nch 700V0.5A Adjustable/Fixed Low Dropout Linear Regulator
|
Fairchild Semiconductor
|
| FAN2501S33 FAN2500S |
Pch Power MOSFET; Surface Mount Type: N; Package: TFP; R DS On (Ω): (max 0.12) (max 0.09); I_S (A): (max -18) 积极的固定电压稳压器
|
HIROSE ELECTRIC Co., Ltd.
|
| TC74VHC4053AFK TC74VHC4051AFT |
Loop detection; Vin (V) max.: 24; Icc (mA) max.: 6.45; Fmax (kHz) max.: 400; Topr [Tjopr] (°C): -40 to 125; Remarks: Power factor collection; Package: DIP; Pin count: 16
Synchronous phase shift full-bridge control IC ; Vin (V) max.: 20; Icc (mA) max.: 10; Fmax (kHz) max.: 2 MHz; Topr [Tjopr] (°C): -40 to 125; Remarks: Switching regulator; Package: TSSOP; Pin count: 20
|
Toshiba Corporation
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
| 5KP10 5KP100 5KP10A 5KP100A 5KP36 5KP8.5A 5KP30 5K |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:50-110V PEAK PULSE POWER: 5000W
TRANSZORBTRANSIENT VOLTAGE SUPPRESSOR TRANSZORB⑩瞬态电压抑制器
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,000.0 V; IC(max) @ 25°: 60.0 A; IC(max) @ 100°: 30.0 A
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
|
Shanghai Sunrise Electronics
GE Security, Inc.
General Semiconductor
|
| UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): -
x8 or x16 ROM (Mask Programmable) x8或x16光盘（掩模可编程
|
NEC, Corp.
|
| IR3101 |
BRUSH DC MOTOR CONTROLLER, 1.6 A, PSIP9
Intelligent Power Module. Gate Driver IC integrated with a half bridge FredFET Designed for sub 250W Motor Drive applications in a 9-Lead SIP. RDSon of 1.0 Ohm
Intelligent Power Module.Gate Driver IC integrated with a half bridge FredFET Designed for sub 250
Half-Bridge FredFet and Integrated Driver
RESISTOR 5.6 OHM 35W TO220
|
IRF[International Rectifier]
|
| APT17F80S APT17F80B |
Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
MICROSEMI POWER PRODUCTS GROUP
|
